NCEP60T18 Todos los transistores

 ..1. Size:320K  ncepower
 ncep60t18.pdf

Pb Free Product http //www.ncepower.com NCEP60T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.1. Size:326K  ncepower
 ncep60t18a.pdf

Pb Free Product http //www.ncepower.com NCEP60T18A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 0.2. Size:324K  ncepower
 ncep60t18d.pdf

http //www.ncepower.com NCEP60T18D NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 6.1. Size:336K  ncepower
 ncep60t15g.pdf

Pb Free Product http //www.ncepower.com NCEP60T15G NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.2. Size:434K  ncepower
 ncep60t12k.pdf

Pb Free Product http //www.ncepower.com NCEP60T12K NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.3. Size:487K  ncepower
 ncep60t12a.pdf

Pb Free Product http //www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

 6.4. Size:342K  ncepower
 ncep60t15ag.pdf

Pb Free Product http //www.ncepower.com NCEP60T15AG NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.5. Size:452K  ncepower
 ncep60t12ak.pdf

Pb Free Product http //www.ncepower.com NCEP60T12AK NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.6. Size:348K  ncepower
 ncep60t12t.pdf

http //www.ncepower.com NCEP60T12T NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 6.7. Size:1113K  ncepower
 ncep60t12ad.pdf

Pb Free Product NCEP60T12AD http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AD uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =120A DS D frequency switching performance. Both conduction and R