NCEP60T18 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP60T18
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 220 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 180 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 965 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0029 Ohm
Package: TO220
NCEP60T18 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP60T18 Datasheet (PDF)
..1. ncep60t18.pdf 
Size:320K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP60T18NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.1. ncep60t12ak.pdf Size:452K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP60T12AKNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.2. ncep60t15g.pdf Size:336K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP60T15GNCE N-Channel Super Trench Power MOSFET Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.3. ncep60t12a.pdf Size:487K _ncepower
Pb Free Product http://www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O
6.4. ncep60t12t.pdf Size:348K _ncepower
http://www.ncepower.com NCEP60T12TNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
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