NCEP60T20T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP60T20T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 255 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 200 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 1900 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
Paquete / Cubierta: TO247
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NCEP60T20T Datasheet (PDF)
ncep60t20t.pdf
Pb Free Product http //www.ncepower.com NCEP60T20T NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep60t20ll.pdf
http //www.ncepower.com NCEP60T20LL NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20LL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep60t20d.pdf
Pb Free Product http //www.ncepower.com NCEP60T20D NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high
ncep60t20.pdf
Pb Free Product http //www.ncepower.com NCEP60T20 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
Otros transistores... NCEP6090 , NCEP6090K , NCEP60T12AK , NCEP60T12T , NCEP60T15G , NCEP60T18 , NCEP60T20 , NCEP60T20A , IRLB3034 , NCEP85T11 , NCEP85T12 , NCEP85T12D , NCEP85T14 , NCEP85T14D , NCEP85T15 , NCEP85T16 , 2SK2960 .
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