All MOSFET. NCEP60T20T Datasheet

 

NCEP60T20T Datasheet and Replacement


   Type Designator: NCEP60T20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 1900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO247
 

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NCEP60T20T Datasheet (PDF)

 ..1. Size:374K  ncepower
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NCEP60T20T

Pb Free Producthttp://www.ncepower.com NCEP60T20TNCE N-Channel Super Trench Power MOSFET Description The NCEP60T20T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.1. Size:339K  ncepower
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NCEP60T20T

http://www.ncepower.com NCEP60T20LLNCE N-Channel Super Trench Power MOSFET Description The NCEP60T20LL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 5.2. Size:942K  ncepower
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NCEP60T20T

Pb Free Producthttp://www.ncepower.comNCEP60T20DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP60T20D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh

 5.3. Size:399K  ncepower
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NCEP60T20T

Pb Free Producthttp://www.ncepower.com NCEP60T20NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

Datasheet: NCEP6090 , NCEP6090K , NCEP60T12AK , NCEP60T12T , NCEP60T15G , NCEP60T18 , NCEP60T20 , NCEP60T20A , 60N06 , NCEP85T11 , NCEP85T12 , NCEP85T12D , NCEP85T14 , NCEP85T14D , NCEP85T15 , NCEP85T16 , 2SK2960 .

History: VBZM630 | JCS10N65C | IRHLYS77034CM | RQ1E050RP | SRC65R110B | SRC65R220 | IRF5802PBF

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