NCEP85T12D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP85T12D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 160 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.5 nS

Cossⓘ - Capacitancia de salida: 830 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: TO263

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NCEP85T12D datasheet

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NCEP85T12D

Pb Free Product http //www.ncepower.com NCEP85T12D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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NCEP85T12D

Pb Free Product http //www.ncepower.com NCEP85T12 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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NCEP85T12D

http //www.ncepower.com NCEP85T15D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi

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NCEP85T12D

Pb Free Product http //www.ncepower.com NCEP85T16D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

MOSTRAR MÁS

Otros transistores... NCEP60T12T, NCEP60T15G, NCEP60T18, NCEP60T20, NCEP60T20A, NCEP60T20T, NCEP85T11, NCEP85T12, IRF520, NCEP85T14, NCEP85T14D, NCEP85T15, NCEP85T16, 2SK2960, 2SK308, 2SK3109-AZ, 2SK312