NCEP85T12D - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP85T12D
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 160 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 12.5 ns
Cossⓘ - Выходная емкость: 830 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
Тип корпуса: TO263
Аналог (замена) для NCEP85T12D
NCEP85T12D Datasheet (PDF)
ncep85t12d.pdf
Pb Free Producthttp://www.ncepower.com NCEP85T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep85t12.pdf
Pb Free Producthttp://www.ncepower.com NCEP85T12NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep85t15d.pdf
http://www.ncepower.com NCEP85T15DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T15D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi
ncep85t16d.pdf
Pb Free Producthttp://www.ncepower.com NCEP85T16DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T16D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Другие MOSFET... NCEP60T12T , NCEP60T15G , NCEP60T18 , NCEP60T20 , NCEP60T20A , NCEP60T20T , NCEP85T11 , NCEP85T12 , HY1906P , NCEP85T14 , NCEP85T14D , NCEP85T15 , NCEP85T16 , 2SK2960 , 2SK308 , 2SK3109-AZ , 2SK312 .
History: IXTP1R6N100D2
History: IXTP1R6N100D2
Список транзисторов
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