2SK2960 Todos los transistores

 ..1. Size:188K  1
 2sk2960.pdf

Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed EAS > 250mJ unit mm VGSS = 30V guaranteed High-speed switching tf = 55ns 4.6 0.2 No secondary breakdown 9.9 0.3 2.9 0.2 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid 2.6 0.1 1.2 0.15 Driving circuit for a motor 1.45 0.15 0.7 0.1

 ..2. Size:278K  inchange semiconductor
 2sk2960.pdf

isc N-Channel MOSFET Transistor 2SK2960 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.1. Size:224K  1
 2sk296.pdf

 8.2. Size:385K  toshiba
 2sk2962.pdf

2SK2962 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2962 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm 4 V gate drive Low drain-source ON resistance R = 0.5 (typ.) DS (ON) High forward transfer admittance Y = 1.2 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhancemen

 8.3. Size:265K  toshiba
 2sk2961.pdf

2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2961 Relay Drive, Motor Drive and DC-DC Converter Application Unit mm Low drain-source ON resistance RDS (ON) = 0.2 (typ.) High forward transfer admittance Yfs = 2.0 S (typ.) Low leakage current IDSS = 100 A (VDS = 60 V) Enhancement-mode Vth = 0.8 2.0 V (VDS = 10 V, ID

 8.4. Size:417K  toshiba
 2sk2967.pdf

2SK2967 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2967 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 48 m (typ.) (ON) High forward transfer admittance Y = 30 S (typ.) fs Low leakage current I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V (V = 10

 8.5. Size:238K  toshiba
 2sk2963.pdf

2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- -MOS V) 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON-resistance RDS (ON) = 0.5 (typ.) High forward transfer admittance Yfs = 1.2 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 100 V) Enhancement mode

 8.6. Size:408K  toshiba
 2sk2964.pdf

2SK2964 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSVI) 2SK2964 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm 4 V gate drive Low drain-source ON resistance R = 0.13 (typ.) DS (ON) High forward transfer admittance Y = 2.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 30 V) DS Enhanceme

 8.7. Size:113K  toshiba
 2sk2965.pdf

2SK2965 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2965 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.15 (typ.) (ON) High forward transfer admittance Y = 10 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode Vth = 1.5 3.5

 8.8. Size:413K  toshiba
 2sk2968.pdf

2SK2968 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2968 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.05 (typ.) High forward transfer admittance Yfs = 7.6 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS =

 8.9. Size:172K  sanyo
 2sk2969.pdf

Ordering number ENN6314 N-Channel Silicon MOSFET 2SK2969 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A 2.5V drive. [2SK2969] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol

 8.10. Size:288K  inchange semiconductor
 2sk296.pdf

isc N-Channel MOSFET Transistor 2SK296 FEATURES Drain Current I = 1A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 4 (Max) @V =15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid driv

 8.11. Size:279K  inchange semiconductor
 2sk2967.pdf

isc N-Channel MOSFET Transistor 2SK2967 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 68m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.12. Size:278K  inchange semiconductor
 2sk2965.pdf

isc N-Channel MOSFET Transistor 2SK2965 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.13. Size:259K  inchange semiconductor
 2sk2968.pdf

isc N-Channel MOSFET Transistor 2SK2968 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo