2SK2960 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK2960
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 400 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 50 ns
Выходная емкость (Cd): 290 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.52 Ohm
Тип корпуса: TO220F
2SK2960 Datasheet (PDF)
2sk2960.pdf
Power F-MOS FETs2SK2960Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed: EAS > 250mJunit: mm VGSS = 30V guaranteed High-speed switching: tf = 55ns 4.60.2 No secondary breakdown 9.90.3 2.90.2 3.20.1 Applications Contactless relay Diving circuit for a solenoid2.60.11.20.15 Driving circuit for a motor1.450.15 0.70.1
2sk2960.pdf
isc N-Channel MOSFET Transistor 2SK2960FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk2962.pdf
2SK2962 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2962 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.5 (typ.) DS (ON) High forward transfer admittance : |Y | = 1.2 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancemen
2sk2961.pdf
2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2961 Relay Drive, Motor Drive and DC-DC Converter Application Unit: mm Low drain-source ON resistance : RDS (ON) = 0.2 (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 A (VDS = 60 V) Enhancement-mode : Vth = 0.8~2.0 V (VDS = 10 V, ID
2sk2967.pdf
2SK2967 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2967 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 48 m (typ.) (ON) High forward transfer admittance : |Y | = 30 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10
2sk2963.pdf
2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2--MOS V) 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.5 (typ.) High forward transfer admittance: |Yfs| = 1.2 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 100 V) Enhancement mode:
2sk2964.pdf
2SK2964 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSVI) 2SK2964 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.13 (typ.) DS (ON) High forward transfer admittance : |Y | = 2.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 30 V) DS Enhanceme
2sk2965.pdf
2SK2965 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2965 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.15 (typ.) (ON) High forward transfer admittance : |Y | = 10 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.5~3.5
2sk2968.pdf
2SK2968 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2968 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 1.05 (typ.) High forward transfer admittance : |Yfs| = 7.6 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS =
2sk2969.pdf
Ordering number:ENN6314N-Channel Silicon MOSFET2SK2969Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A 2.5V drive.[2SK2969]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol
2sk296.pdf
isc N-Channel MOSFET Transistor 2SK296FEATURESDrain Current : I = 1A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 4(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid driv
2sk2967.pdf
isc N-Channel MOSFET Transistor 2SK2967FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 68m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2965.pdf
isc N-Channel MOSFET Transistor 2SK2965FEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.26(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2968.pdf
isc N-Channel MOSFET Transistor 2SK2968FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
