2SK3424-ZK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3424-ZK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 580 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
   Paquete / Cubierta: TO263

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2SK3424-ZK Datasheet (PDF)

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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3424SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3424 is N-Channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3424 TO-220ABdesigned for low voltage high current applications such as2SK3424-ZK TO-263(MP-25ZK)DC/DC con

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isc N-Channel MOSFET Transistor 2SK3424-ZKFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 11.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

5.1. Size:1453K kexin
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SMD Type MOSFETN-Channel MOSFET2SK3424-ZJ Features VDS S = 30V ID = 48 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V) Low gate chargeDrainBodyDiodeGateGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20

5.2. Size:357K inchange semiconductor
2sk3424-zj.pdf

isc N-Channel MOSFET Transistor 2SK3424-ZJFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 11.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

7.1. Size:194K renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

7.2. Size:289K inchange semiconductor
2sk3424.pdf

isc N-Channel MOSFET Transistor 2SK3424FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 11.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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