Справочник MOSFET. 2SK3424-ZK

 

2SK3424-ZK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3424-ZK
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 50 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Минимальное напряжение отсечки |Vgs(off)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 48 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 34 nC
   Время нарастания (tr): 13 ns
   Выходная емкость (Cd): 580 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0115 Ohm
   Тип корпуса: TO263

 Аналог (замена) для 2SK3424-ZK

 

 

2SK3424-ZK Datasheet (PDF)

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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3424SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3424 is N-Channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3424 TO-220ABdesigned for low voltage high current applications such as2SK3424-ZK TO-263(MP-25ZK)DC/DC con

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isc N-Channel MOSFET Transistor 2SK3424-ZKFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 11.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

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SMD Type MOSFETN-Channel MOSFET2SK3424-ZJ Features VDS S = 30V ID = 48 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V) Low gate chargeDrainBodyDiodeGateGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20

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isc N-Channel MOSFET Transistor 2SK3424-ZJFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 11.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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isc N-Channel MOSFET Transistor 2SK3424FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 11.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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