2SK3572-S Todos los transistores

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 2sk3572 2sk3572-s 2sk3572-z 2sk3572-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3572 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3572 TO-220AB designed for low voltage high current applications such as 2SK3572-S TO-262 DC/DC converter with synchronous

 ..2. Size:283K  inchange semiconductor
 2sk3572-s.pdf

isc N-Channel MOSFET Transistor 2SK3572-S FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 6.1. Size:357K  inchange semiconductor
 2sk3572-z.pdf

isc N-Channel MOSFET Transistor 2SK3572-Z FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 6.2. Size:357K  inchange semiconductor
 2sk3572-zk.pdf

isc N-Channel MOSFET Transistor 2SK3572-ZK FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 7.1. Size:45K  kexin
 2sk3572.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3572 TO-263 Unit mm +0.2 4.57-0.2 +0.1 Features 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =5.7m MAX. (VGS =10V, ID = 40A) +0.1 0.1max 1.27-0.1 Low gate charge +0.1 0.81-0.1 QG = 32 nC TYP. (VDD =16V, VGS =10V, ID =80A) 2.54 1Gate Built-in gate protection diode +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2

 7.2. Size:289K  inchange semiconductor
 2sk3572.pdf

isc N-Channel MOSFET Transistor 2SK3572 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid