2SK3572-S - параметры транзистора MOSFET, его аналоги, datasheet

2SK3572-S Datasheet (PDF)

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2sk3572 2sk3572-s 2sk3572-z 2sk3572-zk.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3572SWITCHINGN-CHANNEL POWER MOS FET ORDERING INFORMATIONDESCRIPTION The 2SK3572 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3572 TO-220ABdesigned for low voltage high current applications such as2SK3572-S TO-262DC/DC converter with synchronous

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isc N-Channel MOSFET Transistor 2SK3572-SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

6.1. Size:357K inchange semiconductor
2sk3572-z.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3572-ZFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

6.2. Size:357K inchange semiconductor
2sk3572-zk.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3572-ZKFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole