FDD3510H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

April 2008 FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel 80V, 13.9A, 80m P-Channel -80V, -9.4A, 190m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 80m at VGS = 10V, ID = 4.3A advanced PowerTrench process that has been especially Max rDS(on

FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel 80V, 13.9A, 80m P-Channel -80V, -9.4A, 190m Features General Description Q1 N-Channel These dual N and P- Channel enhancement mode Power Max rDS(on) = 80m at VGS = 10V, ID = 4.3A MOSFETs are produced using ON Semiconductor s advanced Max rDS(on) = 88m at VGS = 6V, ID = 4.1A PowerTrench process that has b

February 2000 PRELIMINARY FDD3570 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been 10 A, 80 V. RDS(ON) = 0.019 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.022 @ VGS = 6 V. DC/DC converters using either synchronous or conventional switching PWM controllers. Fast switching