FDD3510H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD3510H  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13.9 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO252 DPAK

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FDD3510H datasheet

 ..1. Size:427K  fairchild semi
 fdd3510h.pdf pdf_icon

FDD3510H

April 2008 FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel 80V, 13.9A, 80m P-Channel -80V, -9.4A, 190m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 80m at VGS = 10V, ID = 4.3A advanced PowerTrench process that has been especially Max rDS(on

 ..2. Size:486K  onsemi
 fdd3510h.pdf pdf_icon

FDD3510H

FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel 80V, 13.9A, 80m P-Channel -80V, -9.4A, 190m Features General Description Q1 N-Channel These dual N and P- Channel enhancement mode Power Max rDS(on) = 80m at VGS = 10V, ID = 4.3A MOSFETs are produced using ON Semiconductor s advanced Max rDS(on) = 88m at VGS = 6V, ID = 4.1A PowerTrench process that has b

 9.1. Size:210K  fairchild semi
 fdd3570.pdf pdf_icon

FDD3510H

February 2000 PRELIMINARY FDD3570 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been 10 A, 80 V. RDS(ON) = 0.019 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.022 @ VGS = 6 V. DC/DC converters using either synchronous or conventional switching PWM controllers. Fast switching

Otros transistores... FDD24AN06LA0F085, FDD2572, FDD2572F085, FDD2582, FDD2670, STU09N25, FDD26AN06A0F085, FDD306P, IRF1407, STU06L01, FDD3670, STU04N20, FDD3672, STU03N20, FDD3672F085, STU03L07, STU03L01