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FDD3510H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD3510H
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.9 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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FDD3510H Datasheet (PDF)

 ..1. Size:427K  fairchild semi
 fdd3510h.pdf pdf_icon

FDD3510H

April 2008FDD3510HDual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80m P-Channel: -80V, -9.4A, 190mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 80m at VGS = 10V, ID = 4.3Aadvanced PowerTrench process that has been especially Max rDS(on

 ..2. Size:486K  onsemi
 fdd3510h.pdf pdf_icon

FDD3510H

FDD3510HDual N & P-Channel PowerTrench MOSFETN-Channel: 80V, 13.9A, 80m P-Channel: -80V, -9.4A, 190mFeaturesGeneral DescriptionQ1: N-ChannelThese dual N and P- Channel enhancement mode Power Max rDS(on) = 80m at VGS = 10V, ID = 4.3AMOSFETs are produced using ON Semiconductors advanced Max rDS(on) = 88m at VGS = 6V, ID = 4.1APowerTrench process that has b

 9.1. Size:210K  fairchild semi
 fdd3570.pdf pdf_icon

FDD3510H

February 2000PRELIMINARYFDD357080V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic level MOSFET has been 10 A, 80 V. RDS(ON) = 0.019 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.022 @ VGS = 6 V.DC/DC converters using either synchronous orconventional switching PWM controllers. Fast switching

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