FDD3510H PDF Specs and Replacement
Type Designator: FDD3510H
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.9 A
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO252 DPAK
FDD3510H substitution
FDD3510H PDF Specs
fdd3510h.pdf
April 2008 FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel 80V, 13.9A, 80m P-Channel -80V, -9.4A, 190m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 80m at VGS = 10V, ID = 4.3A advanced PowerTrench process that has been especially Max rDS(on... See More ⇒
fdd3510h.pdf
FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel 80V, 13.9A, 80m P-Channel -80V, -9.4A, 190m Features General Description Q1 N-Channel These dual N and P- Channel enhancement mode Power Max rDS(on) = 80m at VGS = 10V, ID = 4.3A MOSFETs are produced using ON Semiconductor s advanced Max rDS(on) = 88m at VGS = 6V, ID = 4.1A PowerTrench process that has b... See More ⇒
fdd3570.pdf
February 2000 PRELIMINARY FDD3570 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been 10 A, 80 V. RDS(ON) = 0.019 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.022 @ VGS = 6 V. DC/DC converters using either synchronous or conventional switching PWM controllers. Fast switching... See More ⇒
Detailed specifications: FDD24AN06LA0F085 , FDD2572 , FDD2572F085 , FDD2582 , FDD2670 , STU09N25 , FDD26AN06A0F085 , FDD306P , 2SK3568 , STU06L01 , FDD3670 , STU04N20 , FDD3672 , STU03N20 , FDD3672F085 , STU03L07 , STU03L01 .
History: HAT2164N
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