All MOSFET. FDD3510H Datasheet

 

FDD3510H MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD3510H

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 13.9 A

Total Gate Charge (Qg): 13 nC

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: TO252 DPAK

FDD3510H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD3510H Datasheet (PDF)

..1. fdd3510h.pdf Size:427K _fairchild_semi

FDD3510H
FDD3510H

April 2008FDD3510HDual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80m P-Channel: -80V, -9.4A, 190mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 80m at VGS = 10V, ID = 4.3Aadvanced PowerTrench process that has been especially Max rDS(on

..2. fdd3510h.pdf Size:486K _onsemi

FDD3510H
FDD3510H

FDD3510HDual N & P-Channel PowerTrench MOSFETN-Channel: 80V, 13.9A, 80m P-Channel: -80V, -9.4A, 190mFeaturesGeneral DescriptionQ1: N-ChannelThese dual N and P- Channel enhancement mode Power Max rDS(on) = 80m at VGS = 10V, ID = 4.3AMOSFETs are produced using ON Semiconductors advanced Max rDS(on) = 88m at VGS = 6V, ID = 4.1APowerTrench process that has b

9.1. fdd3570.pdf Size:210K _fairchild_semi

FDD3510H
FDD3510H

February 2000PRELIMINARYFDD357080V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic level MOSFET has been 10 A, 80 V. RDS(ON) = 0.019 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.022 @ VGS = 6 V.DC/DC converters using either synchronous orconventional switching PWM controllers. Fast switching

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4435 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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