All MOSFET. FDD3510H Datasheet


FDD3510H MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD3510H

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 13.9 A

Total Gate Charge (Qg): 13 nC

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: TO252, DPAK

FDD3510H Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FDD3510H Datasheet (PDF)

0.1. fdd3510h.pdf Size:427K _fairchild_semi


April 2008 FDD3510H Dual N & P-Channel PowerTrench® MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A advanced PowerTrench® process that has been especially Max rDS(on

9.1. fdd3570.pdf Size:210K _fairchild_semi


February 2000 PRELIMINARY FDD3570 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been • 10 A, 80 V. RDS(ON) = 0.019 Ω @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.022 Ω @ VGS = 6 V. DC/DC converters using either synchronous or conventional switching PWM controllers. • Fast switching

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .


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