FDD3510H MOSFET. Datasheet pdf. Equivalent

   Type Designator: FDD3510H
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 13.9 A
   Qgⓘ - Total Gate Charge: 13 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO252 DPAK

FDD3510H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS