FDD3510H MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD3510H
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 35 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 13.9 A
Total Gate Charge (Qg): 13 nC
Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm
FDD3510H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD3510H Datasheet (PDF)
..1. fdd3510h.pdf 
Size:427K _fairchild_semi
April 2008FDD3510HDual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80m P-Channel: -80V, -9.4A, 190mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 80m at VGS = 10V, ID = 4.3Aadvanced PowerTrench process that has been especially Max rDS(on
..2. fdd3510h.pdf Size:486K _onsemi
FDD3510HDual N & P-Channel PowerTrench MOSFETN-Channel: 80V, 13.9A, 80m P-Channel: -80V, -9.4A, 190mFeaturesGeneral DescriptionQ1: N-ChannelThese dual N and P- Channel enhancement mode Power Max rDS(on) = 80m at VGS = 10V, ID = 4.3AMOSFETs are produced using ON Semiconductors advanced Max rDS(on) = 88m at VGS = 6V, ID = 4.1APowerTrench process that has b
9.1. fdd3570.pdf Size:210K _fairchild_semi
February 2000PRELIMINARYFDD357080V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic level MOSFET has been 10 A, 80 V. RDS(ON) = 0.019 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.022 @ VGS = 6 V.DC/DC converters using either synchronous orconventional switching PWM controllers. Fast switching
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4435 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
