2SK3977 Todos los transistores

 ..1. Size:49K  1
 2sk3977.pdf

Ordering number ENA0391 2SK3977 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3977 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4.5V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 2

 0.1. Size:354K  inchange semiconductor
 2sk3977-i.pdf

isc N-Channel MOSFET Transistor 2SK3977-I FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 92m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.2. Size:286K  inchange semiconductor
 2sk3977-d.pdf

isc N-Channel MOSFET Transistor 2SK3977-D FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 92m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

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 2sk3978.pdf

Ordering number ENA0686 2SK3978 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3978 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS 20

 8.2. Size:40K  sanyo
 2sk3979.pdf

Ordering number ENA0263 2SK3979 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3979 Applications Features Low ON-resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS 30 V Drain Curre

 8.3. Size:286K  inchange semiconductor
 2sk3979-d.pdf

isc N-Channel MOSFET Transistor 2SK3979-D FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 550m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.4. Size:354K  inchange semiconductor
 2sk3979-i.pdf

isc N-Channel MOSFET Transistor 2SK3979-I FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 550m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.5. Size:354K  inchange semiconductor
 2sk3978-i.pdf

isc N-Channel MOSFET Transistor 2SK3978-I FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 550m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.6. Size:286K  inchange semiconductor
 2sk3978-d.pdf

isc N-Channel MOSFET Transistor 2SK3978-D FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 550m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi