2SK3977 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3977
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.092 Ohm
   Paquete / Cubierta: TO251 TO252

Búsqueda de reemplazo de MOSFET 2SK3977

2SK3977 Datasheet (PDF)

..1. Size:49K 1
2sk3977.pdf

Ordering number : ENA0391 2SK3977SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3977ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4.5V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 2

0.1. Size:354K inchange semiconductor
2sk3977-i.pdf

isc N-Channel MOSFET Transistor 2SK3977-IFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 92m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.2. Size:286K inchange semiconductor
2sk3977-d.pdf

isc N-Channel MOSFET Transistor 2SK3977-DFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 92m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.1. Size:50K 1
2sk3978.pdf

Ordering number : ENA0686 2SK3978SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3978ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 200 VGate-to-Source Voltage VGSS 20

8.2. Size:40K sanyo
2sk3979.pdf

Ordering number : ENA0263 2SK3979SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3979ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 200 VGate-to-Source Voltage VGSS 30 VDrain Curre

8.3. Size:286K inchange semiconductor
2sk3979-d.pdf

isc N-Channel MOSFET Transistor 2SK3979-DFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.4. Size:354K inchange semiconductor
2sk3979-i.pdf

isc N-Channel MOSFET Transistor 2SK3979-IFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.5. Size:354K inchange semiconductor
2sk3978-i.pdf

isc N-Channel MOSFET Transistor 2SK3978-IFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.6. Size:286K inchange semiconductor
2sk3978-d.pdf

isc N-Channel MOSFET Transistor 2SK3978-DFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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