2SK3977 PDF and Equivalents Search

Ordering number ENA0391 2SK3977 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3977 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4.5V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 2... See More ⇒

isc N-Channel MOSFET Transistor 2SK3977-I FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 92m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

isc N-Channel MOSFET Transistor 2SK3977-D FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 92m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

Ordering number ENA0686 2SK3978 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3978 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS 20 ... See More ⇒

Ordering number ENA0263 2SK3979 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3979 Applications Features Low ON-resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS 30 V Drain Curre... See More ⇒

isc N-Channel MOSFET Transistor 2SK3979-D FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 550m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

isc N-Channel MOSFET Transistor 2SK3979-I FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 550m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

isc N-Channel MOSFET Transistor 2SK3978-I FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 550m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

isc N-Channel MOSFET Transistor 2SK3978-D FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 550m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒