FDD3670 Todos los transistores

 

FDD3670 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD3670

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 34 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 57 nC

Resistencia drenaje-fuente RDS(on): 0.032 Ohm

Empaquetado / Estuche: TO252, DPAK

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FDD3670 Datasheet (PDF)

1.1. fdd3670.pdf Size:67K _fairchild_semi

FDD3670
FDD3670

June 2001 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 34 A, 100 V. R = 32 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 35 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Low gate charge (57 nC typical)

4.1. fdd3672.pdf Size:268K _fairchild_semi

FDD3670
FDD3670

March 2010 FDD3672 N-Channel UltraFET® Trench MOSFET 100V, 44A, 28mΩ Features Applications • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • DC/DC converters and Off-Line UPS • Qg(tot) = 24nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low Qrr Body Diode • High Voltage Synchronous Rectif

4.2. fdd3672 f085.pdf Size:111K _fairchild_semi

FDD3670
FDD3670

March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ Applications Features DC/DC converters and Off-Line UPS Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie

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