FDD3670 Todos los transistores

June 2001 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 34 A, 100 V. R = 32 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 35 m @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. Low gate charge (57 nC typical)

March 2010 FDD3672 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m Features Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectif

March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m Applications Features DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie

March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m Applications Features DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie

FDD3672 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless