FDD3670 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD3670
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 83 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 34 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 57 nC
Resistencia drenaje-fuente RDS(on): 0.032 Ohm
Empaquetado / Estuche: TO252, DPAK
Búsqueda de reemplazo de MOSFET FDD3670
FDD3670 Datasheet (PDF)
1.1. fdd3670.pdf 
Size:67K _fairchild_semi
June 2001 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 34 A, 100 V. R = 32 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 35 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Low gate charge (57 nC typical)
4.1. fdd3672.pdf Size:268K _fairchild_semi
March 2010 FDD3672 N-Channel UltraFET® Trench MOSFET 100V, 44A, 28mΩ Features Applications • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • DC/DC converters and Off-Line UPS • Qg(tot) = 24nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low Qrr Body Diode • High Voltage Synchronous Rectif
4.2. fdd3672 f085.pdf Size:111K _fairchild_semi
March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ Applications Features DC/DC converters and Off-Line UPS Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie
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