FDD3670 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD3670
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 34 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 57 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: TO252 DPAK

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FDD3670 Datasheet (PDF)

..1. Size:67K fairchild semi
fdd3670.pdf

June 2001 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 34 A, 100 V. R = 32 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 35 m @ V = 6 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers. Low gate charge (57 nC typical)

8.1. Size:268K fairchild semi
fdd3672.pdf

March 2010FDD3672N-Channel UltraFET Trench MOSFET100V, 44A, 28mFeatures Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectif

8.2. Size:111K fairchild semi
fdd3672 f085.pdf

March 2011FDD3672_F085N-Channel UltraFET Trench MOSFET 100V, 44A, 28m ApplicationsFeatures DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie

8.3. Size:1737K onsemi
fdd3672.pdf

8.4. Size:111K onsemi
fdd3672 f085.pdf

8.5. Size:860K cn vbsemi
fdd3672.pdf

FDD3672www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

Otros transistores... FDD2572F085 , FDD2582 , FDD2670 , STU09N25 , FDD26AN06A0F085 , FDD306P , FDD3510H , STU06L01 , P0903BDG , STU04N20 , FDD3672 , STU03N20 , FDD3672F085 , STU03L07 , STU03L01 , FDD3680 , FDD3682F085 .

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