FDD3670 MOSFET Datasheet: N-Ch, 100V, 34A. Full specification with pinout and replacement list

FDD3670 Specs and Replacement

   Type Designator: FDD3670
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO252 DPAK

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FDD3670 datasheet

..1. Size:67K fairchild semi
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June 2001 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 34 A, 100 V. R = 32 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 35 m @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. Low gate charge (57 nC typical) ... See More ⇒

8.1. Size:268K fairchild semi
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March 2010 FDD3672 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m Features Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectif... See More ⇒

8.2. Size:111K fairchild semi
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March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m Applications Features DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie... See More ⇒

8.3. Size:1737K onsemi
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