FDD3670 Datasheet and Replacement
Type Designator: FDD3670
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO252 DPAK
FDD3670 substitution
FDD3670 Datasheet (PDF)
fdd3670.pdf

June 2001 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 34 A, 100 V. R = 32 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 35 m @ V = 6 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers. Low gate charge (57 nC typical)
fdd3672.pdf

March 2010FDD3672N-Channel UltraFET Trench MOSFET100V, 44A, 28mFeatures Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectif
fdd3672 f085.pdf

March 2011FDD3672_F085N-Channel UltraFET Trench MOSFET 100V, 44A, 28m ApplicationsFeatures DC/DC converters and Off-Line UPS Typ rDS(on) = 24m at VGS = 10V, ID = 44A Distributed Power Architectures and VRMs Typ Qg(10) = 24nC at VGS = 10V Primary Switch for 24V and 48V Systems Low Miller Charge Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficie
Datasheet: FDD2572F085 , FDD2582 , FDD2670 , STU09N25 , FDD26AN06A0F085 , FDD306P , FDD3510H , STU06L01 , 13N50 , STU04N20 , FDD3672 , STU03N20 , FDD3672F085 , STU03L07 , STU03L01 , FDD3680 , FDD3682F085 .
Keywords - FDD3670 MOSFET datasheet
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History: IRFN9240 | NTHC5513



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