2SK4227JS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK4227JS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 48 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 220 nS
Cossⓘ - Capacitancia de salida: 480 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0137 Ohm
Paquete / Cubierta: TO220F
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2SK4227JS Datasheet (PDF)
2sk4227js.pdf
2SK4227JSOrdering number : ENA1355SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4227JSApplicationsFeatures Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75 VGa
2sk4227js.pdf
isc N-Channel MOSFET Transistor 2SK4227JSFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 13.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk4222.pdf
2SK4222Ordering number : ENA1519SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4222ApplicationsFeatures Low ON-resistance. High-speed switching. 10V drive. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600
2sk4221.pdf
2SK4221Ordering number : ENA1518SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4221ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Con
2sk4222.pdf
isc N-Channel MOSFET Transistor 2SK4222FEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.34(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk4221.pdf
isc N-Channel MOSFET Transistor 2SK4221FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.24(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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