2SK4227JS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK4227JS
Código: K4227
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 35 W
Voltaje máximo drenador - fuente |Vds|: 75 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 48 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 2 V
Carga de la puerta (Qg): 100 nC
Tiempo de subida (tr): 220 nS
Conductancia de drenaje-sustrato (Cd): 480 pF
Resistencia entre drenaje y fuente RDS(on): 0.0137 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET 2SK4227JS
2SK4227JS Datasheet (PDF)
2sk4227js.pdf
2SK4227JSOrdering number : ENA1355SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4227JSApplicationsFeatures Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75 VGa
2sk4227js.pdf
isc N-Channel MOSFET Transistor 2SK4227JSFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 13.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk4222.pdf
2SK4222Ordering number : ENA1519SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4222ApplicationsFeatures Low ON-resistance. High-speed switching. 10V drive. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600
2sk4221.pdf
2SK4221Ordering number : ENA1518SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4221ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Con
2sk4222.pdf
isc N-Channel MOSFET Transistor 2SK4222FEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.34(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk4221.pdf
isc N-Channel MOSFET Transistor 2SK4221FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.24(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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