2SK4227JS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK4227JS
Маркировка: K4227
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 35 W
Предельно допустимое напряжение сток-исток |Uds|: 75 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Минимальное напряжение отсечки |Vgs(off)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 48 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 100 nC
Время нарастания (tr): 220 ns
Выходная емкость (Cd): 480 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0137 Ohm
Тип корпуса: TO220F
2SK4227JS Datasheet (PDF)
2sk4227js.pdf
2SK4227JSOrdering number : ENA1355SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4227JSApplicationsFeatures Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75 VGa
2sk4227js.pdf
isc N-Channel MOSFET Transistor 2SK4227JSFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 13.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk4222.pdf
2SK4222Ordering number : ENA1519SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4222ApplicationsFeatures Low ON-resistance. High-speed switching. 10V drive. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600
2sk4221.pdf
2SK4221Ordering number : ENA1518SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4221ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Con
2sk4222.pdf
isc N-Channel MOSFET Transistor 2SK4222FEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.34(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk4221.pdf
isc N-Channel MOSFET Transistor 2SK4221FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.24(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 75N75G-TF3-T
