2SK430L Todos los transistores

 ..1. Size:210K  1
 2sk430l 2sk430s.pdf

 ..2. Size:354K  inchange semiconductor
 2sk430l.pdf

isc N-Channel MOSFET Transistor 2SK430L FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.1. Size:286K  inchange semiconductor
 2sk430s.pdf

isc N-Channel MOSFET Transistor 2SK430S FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.1. Size:224K  sanyo
 2sk436.pdf

Ordering number EN1405B N-Channel Junction Silicon FET 2SK436 High-Frequency, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AM tuner RF amplifiers and low-noise amplifiers. unit mm 2050A Features [2SK436] Large yfs . 0.4 0.16 Ultralow noise figure. 3 Small Crss. 0 to 0.1 Ultrasmall-sized package permitting 2SK436-app

 9.2. Size:23K  hitachi
 2sk439.pdf

2SK439 Silicon N-Channel MOS FET ADE-208-1172 (Z) 1st. Edition Mar. 2001 Application VHF amplifier Outline SPAK 1. Gate 1 2 2. Source 3 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 20 V Gate to source voltage VGSS 5V Drain current ID 30 mA Gate current IG 1mA Channel power dissipation Pch 300 mW Channel

 9.3. Size:181K  isahaya
 2sk433.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possi