2SK430L MOSFET Datasheet: N-Ch, 150V, 3A. Full specification with pinout and replacement list

2SK430L Specs and Replacement

Type Designator: 2SK430L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO251

2SK430L substitution

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2SK430L datasheet

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2sk430l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK430L FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

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2sk430s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK430S FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

9.1. Size:224K sanyo
2sk436.pdf pdf_icon

Ordering number EN1405B N-Channel Junction Silicon FET 2SK436 High-Frequency, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AM tuner RF amplifiers and low-noise amplifiers. unit mm 2050A Features [2SK436] Large yfs . 0.4 0.16 Ultralow noise figure. 3 Small Crss. 0 to 0.1 Ultrasmall-sized package permitting 2SK436-app... See More ⇒