2SK430S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK430S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 20 W
   Voltaje máximo drenador - fuente |Vds|: 150 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Voltaje de corte de la puerta |Vgs(off)|: 1 V
   Tiempo de subida (tr): 25 nS
   Conductancia de drenaje-sustrato (Cd): 100 pF
   Resistencia entre drenaje y fuente RDS(on): 1 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET 2SK430S

2SK430S Datasheet (PDF)

..1. Size:210K 1
2sk430l 2sk430s.pdf

..2. Size:286K inchange semiconductor
2sk430s.pdf

isc N-Channel MOSFET Transistor 2SK430SFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

8.1. Size:354K inchange semiconductor
2sk430l.pdf

isc N-Channel MOSFET Transistor 2SK430LFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

9.1. Size:224K sanyo
2sk436.pdf

Ordering number:EN1405BN-Channel Junction Silicon FET2SK436High-Frequency, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifiers and low-noise amplifiers. unit:mm2050AFeatures [2SK436] Large yfs.0.40.16 Ultralow noise figure. 3 Small Crss.0 to 0.1 Ultrasmall-sized package permitting 2SK436-app

9.2. Size:23K hitachi
2sk439.pdf

2SK439Silicon N-Channel MOS FETADE-208-1172 (Z)1st. EditionMar. 2001ApplicationVHF amplifierOutlineSPAK1. Gate122. Source33. Drain2SK439Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 20 VGate to source voltage VGSS 5VDrain current ID 30 mAGate current IG 1mAChannel power dissipation Pch 300 mWChannel

9.3. Size:181K isahaya
2sk433.pdf

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONMarketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 JapanKeep safety first in your circuit designs!ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possi

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