2SK430S - Даташиты. Аналоги. Основные параметры

isc N-Channel MOSFET Transistor 2SK430SFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK430LFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Ordering number:EN1405BN-Channel Junction Silicon FET2SK436High-Frequency, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifiers and low-noise amplifiers. unit:mm2050AFeatures [2SK436] Large yfs.0.40.16 Ultralow noise figure. 3 Small Crss.0 to 0.1 Ultrasmall-sized package permitting 2SK436-app

2SK439Silicon N-Channel MOS FETADE-208-1172 (Z)1st. EditionMar. 2001ApplicationVHF amplifierOutlineSPAK1. Gate122. Source33. Drain2SK439Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 20 VGate to source voltage VGSS 5VDrain current ID 30 mAGate current IG 1mAChannel power dissipation Pch 300 mWChannel

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONMarketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 JapanKeep safety first in your circuit designs!ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possi