2SK591 Todos los transistores

 ..1. Size:2898K  1
 2sk591.pdf

 ..2. Size:279K  inchange semiconductor
 2sk591.pdf

isc N-Channel MOSFET Transistor 2SK591 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 0.055 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.1. Size:313K  sanyo
 2sk596s.pdf

2SK596S Ordering number ENA0944 SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET Electret Condenser Microphone 2SK596S Applications Features Low output noise voltage VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic

 9.2. Size:240K  onsemi
 2sk596s-b.pdf

Ordering number ENA0944 2SK596S N-Channel JFET http //onsemi.com 20V, 140 to 350 A, 1.0mS, SPA Features Low output noise voltage VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic Adoption of FBET process Specifications Absolut

 9.3. Size:53K  interfet
 2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf

Databook.fxp 1/14/99 2 03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK17 2SK40 2SK59 2SK105 Japanese IFN17 IFN40 IFN59 IFN105 InterFET NJ16 NJ16 NJ16 NJ16 Process Unit N N N N Parameters Conditions Limit Channel Channel Channel Channel V BVGSS IG = 1.0 A 20 50 30 50 Min nA 0.10 1.0 1.0 1.0 IGSS VGS = ( )

 9.4. Size:85K  blue-rocket-elect
 2sk596.pdf

2SK596 N-CHANNEL Junction FET/N Purpose Especially suited for use in audio,telephone capacitor microphones. Features Excellent voltage characteristic,excellent transient characteristic. /Absolute maximum ratings(Ta=25 )