2SK591 MOSFET Datasheet: N-Ch, 60V, 15A. Full specification with pinout and replacement list

2SK591 Specs and Replacement

Type Designator: 2SK591

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO220F

2SK591 substitution

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2SK591 datasheet

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isc N-Channel MOSFET Transistor 2SK591 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 0.055 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

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2SK596S Ordering number ENA0944 SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET Electret Condenser Microphone 2SK596S Applications Features Low output noise voltage VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic ... See More ⇒

9.2. Size:240K onsemi
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Ordering number ENA0944 2SK596S N-Channel JFET http //onsemi.com 20V, 140 to 350 A, 1.0mS, SPA Features Low output noise voltage VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic Adoption of FBET process Specifications Absolut... See More ⇒