ISC60NM60L Todos los transistores

 ..1. Size:330K  inchange semiconductor
 isc60nm60l.pdf

isc N-Channel MOSFET Transistor ISC60NM60L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.1. Size:140K  isahaya
 isc6046au1.pdf

ISC6046AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON NPN EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISC6046AU1 is a silicon NPN epitaxial type transistor designed with 0.35 0.8 0.35 high collector current, low VCE sat . FEATURE

 9.2. Size:152K  isahaya
 isc6053am1.pdf

 9.3. Size:189K  isahaya
 isc6053au1.pdf

ISC6053AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON NPN EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISC6053AU1 is a silicon NPN epitaxial type transistor 0.35 0.8 0.35 Designed with high collector current, low VCE(sat). FEATURE