ISC60NM60L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ISC60NM60L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 320 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: TO247

Búsqueda de reemplazo de MOSFET ISC60NM60L

ISC60NM60L Datasheet (PDF)

..1. Size:330K inchange semiconductor
isc60nm60l.pdf

isc N-Channel MOSFET Transistor ISC60NM60LFEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

9.1. Size:140K isahaya
isc6046au1.pdf

ISC6046AU1PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONBecause this device is developing now. SILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 1.5 ISC6046AU1 is a silicon NPN epitaxial type transistor designed with 0.35 0.8 0.35high collector current, low VCEsat. FEATURE

9.2. Size:152K isahaya
isc6053am1.pdf

ISC6053AM1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 2.1 ISC6053AM1 is a silicon NPN epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current ICMAX=650mA Low collector to emitter saturation voltage VCE

9.3. Size:189K isahaya
isc6053au1.pdf

ISC6053AU1PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONBecause this device is developing now. SILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 1.5 ISC6053AU1 is a silicon NPN epitaxial type transistor 0.35 0.8 0.35Designed with high collector current, low VCE(sat). FEATURE

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: