All MOSFET. ISC60NM60L Datasheet

 

ISC60NM60L MOSFET. Datasheet pdf. Equivalent


   Type Designator: ISC60NM60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO247

 ISC60NM60L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ISC60NM60L Datasheet (PDF)

 ..1. Size:330K  inchange semiconductor
isc60nm60l.pdf

ISC60NM60L
ISC60NM60L

isc N-Channel MOSFET Transistor ISC60NM60LFEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 9.1. Size:140K  isahaya
isc6046au1.pdf

ISC60NM60L
ISC60NM60L

ISC6046AU1PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONBecause this device is developing now. SILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 1.5 ISC6046AU1 is a silicon NPN epitaxial type transistor designed with 0.35 0.8 0.35high collector current, low VCEsat. FEATURE

 9.2. Size:152K  isahaya
isc6053am1.pdf

ISC60NM60L
ISC60NM60L

ISC6053AM1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 2.1 ISC6053AM1 is a silicon NPN epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current ICMAX=650mA Low collector to emitter saturation voltage VCE

 9.3. Size:189K  isahaya
isc6053au1.pdf

ISC60NM60L
ISC60NM60L

ISC6053AU1PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONBecause this device is developing now. SILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 1.5 ISC6053AU1 is a silicon NPN epitaxial type transistor 0.35 0.8 0.35Designed with high collector current, low VCE(sat). FEATURE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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