ISC60NM60L
MOSFET. Datasheet pdf. Equivalent
Type Designator: ISC60NM60L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 320
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package:
TO247
ISC60NM60L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ISC60NM60L
Datasheet (PDF)
..1. Size:330K inchange semiconductor
isc60nm60l.pdf
isc N-Channel MOSFET Transistor ISC60NM60LFEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
9.1. Size:140K isahaya
isc6046au1.pdf
ISC6046AU1PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONBecause this device is developing now. SILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 1.5 ISC6046AU1 is a silicon NPN epitaxial type transistor designed with 0.35 0.8 0.35high collector current, low VCEsat. FEATURE
9.2. Size:152K isahaya
isc6053am1.pdf
ISC6053AM1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 2.1 ISC6053AM1 is a silicon NPN epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current ICMAX=650mA Low collector to emitter saturation voltage VCE
9.3. Size:189K isahaya
isc6053au1.pdf
ISC6053AU1PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONBecause this device is developing now. SILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 1.5 ISC6053AU1 is a silicon NPN epitaxial type transistor 0.35 0.8 0.35Designed with high collector current, low VCE(sat). FEATURE
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