ISC60NM60L Specs and Replacement
Type Designator: ISC60NM60L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO247
ISC60NM60L substitution
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ISC60NM60L datasheet
isc60nm60l.pdf
isc N-Channel MOSFET Transistor ISC60NM60L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
isc6046au1.pdf
ISC6046AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON NPN EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISC6046AU1 is a silicon NPN epitaxial type transistor designed with 0.35 0.8 0.35 high collector current, low VCE sat . FEATURE ... See More ⇒
isc6053au1.pdf
ISC6053AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON NPN EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISC6053AU1 is a silicon NPN epitaxial type transistor 0.35 0.8 0.35 Designed with high collector current, low VCE(sat). FEATURE ... See More ⇒
Detailed specifications: 2SK811, 2SK895, 2SK896, FMW60N070S2HF, 60NM60L-T3P, 60NM60L-T47, 60NM60G-T3P, 60NM60G-T47, BS170, ISCD3NK80Z, ISCNH060D, FDN363N, ISCNH363N, ISCNH370W, ISCNH371D, ISCNH372B, ISCNH373F
Keywords - ISC60NM60L MOSFET specs
ISC60NM60L cross reference
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