ISCNH375W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ISCNH375W  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 240 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: TO247

  📄📄 Copiar 

 Búsqueda de reemplazo de ISCNH375W MOSFET

- Selecciónⓘ de transistores por parámetros

 

ISCNH375W datasheet

 ..1. Size:580K  inchange semiconductor
 iscnh375w.pdf pdf_icon

ISCNH375W

isc N-Channel MOSFET Transistor ISCNH375W FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 7.1. Size:286K  inchange semiconductor
 iscnh371d.pdf pdf_icon

ISCNH375W

isc N-Channel MOSFET Transistor ISCNH371D FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 7.2. Size:356K  inchange semiconductor
 iscnh377b.pdf pdf_icon

ISCNH375W

isc N-Channel MOSFET Transistor ISCNH377B FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 7.3. Size:288K  inchange semiconductor
 iscnh379p.pdf pdf_icon

ISCNH375W

isc N-Channel MOSFET Transistor ISCNH379P FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 10 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

MOSTRAR MÁS

Otros transistores... ISCNH060D, FDN363N, ISCNH363N, ISCNH370W, ISCNH371D, ISCNH372B, ISCNH373F, ISCNH374D, STP65NF06, ISCNH376L, ISCNH377B, ISCNH379P, ISF40NF20, ISH3N150, IXFY26N30X3, IXFA26N30X3, IXFP26N30X3