ISCNH376L Todos los transistores

 

ISCNH376L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ISCNH376L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 500 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 550 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 72 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: TO3PL

 Búsqueda de reemplazo de ISCNH376L MOSFET

- Selecciónⓘ de transistores por parámetros

 

ISCNH376L datasheet

 ..1. Size:283K  inchange semiconductor
iscnh376l.pdf pdf_icon

ISCNH376L

isc N-Channel MOSFET Transistor ISCNH376L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 50m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 7.1. Size:286K  inchange semiconductor
iscnh371d.pdf pdf_icon

ISCNH376L

isc N-Channel MOSFET Transistor ISCNH371D FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 7.2. Size:356K  inchange semiconductor
iscnh377b.pdf pdf_icon

ISCNH376L

isc N-Channel MOSFET Transistor ISCNH377B FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 7.3. Size:288K  inchange semiconductor
iscnh379p.pdf pdf_icon

ISCNH376L

isc N-Channel MOSFET Transistor ISCNH379P FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 10 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

Otros transistores... FDN363N , ISCNH363N , ISCNH370W , ISCNH371D , ISCNH372B , ISCNH373F , ISCNH374D , ISCNH375W , 20N50 , ISCNH377B , ISCNH379P , ISF40NF20 , ISH3N150 , IXFY26N30X3 , IXFA26N30X3 , IXFP26N30X3 , MMD60R900QRH .

History: ISF40NF20 | RQA0004LXAQS | S30N08M | NTD4855N | 2SK2028-01MR | MDP5N50TH | WPM4803

 

 

 

 

↑ Back to Top
.