ISCNH376L - описание и поиск аналогов

 

ISCNH376L. Аналоги и основные параметры

Наименование производителя: ISCNH376L

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 500 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 550 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 72 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm

Тип корпуса: TO3PL

Аналог (замена) для ISCNH376L

- подборⓘ MOSFET транзистора по параметрам

 

ISCNH376L даташит

 ..1. Size:283K  inchange semiconductor
iscnh376l.pdfpdf_icon

ISCNH376L

isc N-Channel MOSFET Transistor ISCNH376L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 50m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 7.1. Size:286K  inchange semiconductor
iscnh371d.pdfpdf_icon

ISCNH376L

isc N-Channel MOSFET Transistor ISCNH371D FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 7.2. Size:356K  inchange semiconductor
iscnh377b.pdfpdf_icon

ISCNH376L

isc N-Channel MOSFET Transistor ISCNH377B FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 7.3. Size:288K  inchange semiconductor
iscnh379p.pdfpdf_icon

ISCNH376L

isc N-Channel MOSFET Transistor ISCNH379P FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 10 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

Другие MOSFET... FDN363N , ISCNH363N , ISCNH370W , ISCNH371D , ISCNH372B , ISCNH373F , ISCNH374D , ISCNH375W , 20N50 , ISCNH377B , ISCNH379P , ISF40NF20 , ISH3N150 , IXFY26N30X3 , IXFA26N30X3 , IXFP26N30X3 , MMD60R900QRH .

History: ZXMP10A18KTC | AP4533GEM-HF | IRLS3034-7PPBF

 

 

 

 

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