STF6N90K5 Todos los transistores

 

STF6N90K5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STF6N90K5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.2 nS

Cossⓘ - Capacitancia de salida: 31 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm

Encapsulados: TO220F

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STF6N90K5 datasheet

 ..1. Size:710K  1
stf6n90k5.pdf pdf_icon

STF6N90K5

STF6N90K5 N-channel 900 V, 0.91 typ., 6 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) D STF6N90K5 900 V 1.10 6 A Industry s lowest R x area DS(on) Industry s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected TO-220FP Applications

 ..2. Size:279K  inchange semiconductor
stf6n90k5.pdf pdf_icon

STF6N90K5

isc N-Channel MOSFET Transistor STF6N90K5 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.1. Size:931K  st
stf6n95k5.pdf pdf_icon

STF6N90K5

STF6N95K5 N-channel 950 V, 1 typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF6N95K5 950 V 1.25 9 A 25 W Industry s lowest RDS(on) * area Industry s best figure of merit (FoM) 3 2 1 Ultra-low gate charge 100% avalanche tested TO-220FP Zener-protected Applications

 8.2. Size:236K  inchange semiconductor
stf6n95k5.pdf pdf_icon

STF6N90K5

INCHANGE Semiconductor isc N-Channel MOSFET Transistor STF6N95K5 FEATURES drain-source on-resistance RDS(on) 1.25 (max) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

Otros transistores... ISCNH379P , ISF40NF20 , ISH3N150 , IXFY26N30X3 , IXFA26N30X3 , IXFP26N30X3 , MMD60R900QRH , STF23N80K5 , IRFB31N20D , SW3N90U , SWI3N90U , SWMI3N90U , SWD3N90U , SCT10N120 , SCT20N120 , STB100N6F7 , STB10LN80K5 .

History: 2SJ527S | 2SK3306 | 2N65G-TM3-T

 

 

 


History: 2SJ527S | 2SK3306 | 2N65G-TM3-T

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