STB15NK50Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STB15NK50Z
Código: B15NK50Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 76 nC
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 264 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.34 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET STB15NK50Z
STB15NK50Z Datasheet (PDF)
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stb15n80k5.pdf
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stb15nm60nd.pdf
isc N-Channel MOSFET Transistor STB15NM60NDDESCRIPTIONDrain Current: I =14A@ T =25D CDrain Source Voltage:: V = 600V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: ZXMD63C02X
History: ZXMD63C02X
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