STB15NK50Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STB15NK50Z
Маркировка: B15NK50Z
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 160 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 14 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 76 nC
Время нарастания (tr): 23 ns
Выходная емкость (Cd): 264 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.34 Ohm
Тип корпуса: TO263
Аналог (замена) для STB15NK50Z
STB15NK50Z Datasheet (PDF)
stp15nk50zfp stb15nk50z stb15nk50z-1 stw15nk50z.pdf
STP15NK50Z/FP - STB15NK50ZSTB15NK50Z-1 - STW15NK50ZN-channel 500V - 0.30 - 14A TO-220/FP/D2PAK/I2PAK/TO-247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP15NK50Z 500V
stp15nk50z stp15nk50zfp stb15nk50z stb15nk50z-1 stw15nk50z.pdf
STP15NK50Z/FP - STB15NK50ZSTB15NK50Z-1 - STW15NK50ZN-channel 500V - 0.30 - 14A TO-220/FP/D2PAK/I2PAK/TO-247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP15NK50Z 500V
stb15nk50zt4 stp15nk50zfp.pdf
STP15NK50Z/FP - STB15NK50ZSTB15NK50Z-1 - STW15NK50ZN-channel 500V - 0.30 - 14A TO-220/FP/D2PAK/I2PAK/TO-247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP15NK50Z 500V
stb15nm65n sti15nm65n stf15nm65n stp15nm65n stw15nm65n.pdf
STF15NM65N-STI15NM65N-STW15NM65NSTB15NM65N-STP15NM65NN-channel 650V - 0.25 - 15.5A - TO-220/FP - D2/I2PAK - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) Max ID(@Tjmax)323121STB15NM65N 710 V
stb15nm60nd stf15nm60nd sti15nm60nd stp15nm60nd stw15nm60nd.pdf
STB15NM60ND - STF/I15NM60NDSTP15NM60ND - STW15NM60NDN-channel 600 V - 0.27 - 14 A - FDmesh II Power MOSFETD2PAK, I2PAK, TO-220, TO-220FP, TO-247Features Type VDSS (@Tjmax)RDS(on) max ID3 3STB15NM60ND 14 A 211STF15NM60ND 14 AD2PAKIPAKSTI15NM60ND 650 V 0.299 14 A(1)321STP15NM60ND 14 ASTW15NM60ND 14 ATO-2471. Limited only by maximum temperature
stb15n65m5 std15n65m5.pdf
STB15N65M5, STD15N65M5DatasheetN-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packagesFeaturesTABTABVDS @RDS(on) max. IDOrder codeTJmax32213STB15N65M51710 V 0.34 11 AD2PAK DPAKSTD15N65M5 Extremely low RDS(on)D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval
stb15n80k5 stf15n80k5 stp15n80k5 stw15n80k5.pdf
STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5N-channel 800 V, 0.3 typ., 14 A MDmesh K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABOrder code VDS RDS(on)max ID PTOT3STB15N80K5 190 W132 STF15N80K5 35 WD2PAK1800 V 0.375 14 ATO-220FPSTP15N80K5190 WTABSTW15N80K5 Industrys lowest RDS(on)
stb15nm60n stf15nm60n sti15nm60n stp15nm60n stw15nm60n.pdf
STB15NM60N - STF/I15NM60NSTP15NM60N - STW15NM60NN-channel 600V - 0.270 - 14A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB15NM60N 650V
stp15nm60nd stf15nm60nd sti15nm60nd stb15nm60nd stw15nm60nd.pdf
STB15NM60ND - STF/I15NM60NDSTP15NM60ND - STW15NM60NDN-channel 600 V - 0.27 - 14 A - FDmesh II Power MOSFETD2PAK, I2PAK, TO-220, TO-220FP, TO-247Features Type VDSS (@Tjmax)RDS(on) max ID3 3STB15NM60ND 14 A 211STF15NM60ND 14 AD2PAKIPAKSTI15NM60ND 650 V 0.299 14 A(1)321STP15NM60ND 14 ASTW15NM60ND 14 ATO-2471. Limited only by maximum temperature
stb15nm60n stf15nm60n sti15nm60n stp15nm60n stw15nm60n.pdf
STB15NM60N - STF/I15NM60NSTP15NM60N - STW15NM60NN-channel 600V - 0.270 - 14A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB15NM60N 650V
stb15n65.pdf
STB15N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTB15N25 250 V
stb15n80k5.pdf
Isc N-Channel MOSFET Transistor STB15N80K5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
stb15nm60nd.pdf
isc N-Channel MOSFET Transistor STB15NM60NDDESCRIPTIONDrain Current: I =14A@ T =25D CDrain Source Voltage:: V = 600V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0
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