STB23N80K5 Todos los transistores

STB23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a D PAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT TAB STB23N80K5 800 V 0.28 16 A 190 W Industry s lowest R x area DS(on) 3 Industry s best figure of merit (FoM) 1 Ultra low gate charge 100% avalanche tested Zener-protected

STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N N-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID 3 (@Tjmax) max 3 1 2 1 STB23NM60N 19 A D PAK I PAK STI23NM60N 19 A 3 STF23NM60N 650 V 0.180 19 A (1) 2 1 STP23NM60N 19 A TO-247 STW23NM60N 19 A 3 3 2 2 1 1 1. Limited

STx23NM60ND N-channel 600 V, 0.150 , 19.5 A, FDmesh II Power MOSFET (with fast diode) D PAK, I PAK, TO-220, TO-220FP, TO-247 Features VDSS RDS(on) Type ID 3 max. 3 (@Tjmax) 1 2 1 STx23NM60ND 650 V

STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N N-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID 3 (@Tjmax) max 3 1 2 1 STB23NM60N 19 A D PAK I PAK STI23NM60N 19 A 3 STF23NM60N 650 V 0.180 19 A (1) 2 1 STP23NM60N 19 A TO-247 STW23NM60N 19 A 3 3 2 2 1 1 1. Limited

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STB23NM60ND FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STB23NM50N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE