STB23N80K5
MOSFET. Datasheet pdf. Equivalent
Type Designator: STB23N80K5
Marking Code: 23N80K5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 190
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 33
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 65
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28
Ohm
Package:
TO263
STB23N80K5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB23N80K5
Datasheet (PDF)
..1. Size:897K st
stb23n80k5.pdf 
STB23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTTABSTB23N80K5 800 V 0.28 16 A 190 W Industrys lowest R x area DS(on)3 Industrys best figure of merit (FoM) 1 Ultra low gate charge 100% avalanche tested Zener-protected
8.1. Size:560K st
stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf
STB23NM60N-STF23NM60NSTI23NM60N-STP23NM60N-STW23NM60NN-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FPTO-247, second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB23NM60N 19 ADPAKIPAKSTI23NM60N 19 A3STF23NM60N 650 V 0.180 19 A (1)21STP23NM60N 19 ATO-247STW23NM60N 19 A3 32 21 11. Limited
8.3. Size:558K st
stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf
STB23NM60N-STF23NM60NSTI23NM60N-STP23NM60N-STW23NM60NN-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FPTO-247, second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB23NM60N 19 ADPAKIPAKSTI23NM60N 19 A3STF23NM60N 650 V 0.180 19 A (1)21STP23NM60N 19 ATO-247STW23NM60N 19 A3 32 21 11. Limited
8.4. Size:757K st
stb23nm50n stf23nm50n stp23nm50n stw23nm50n.pdf
STB23NM50N, STF23NM50NSTP23NM50N, STW23NM50NN-channel 500 V, 0.162 , 17 A TO-220, TO-220FP, TO-247, D2PAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max33221STB23NM50N1TO-220FP TO-220STF23NM50N550 V
8.5. Size:203K inchange semiconductor
stb23nm60nd.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB23NM60NDFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
8.6. Size:203K inchange semiconductor
stb23nm50n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB23NM50NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
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