STB23N80K5 MOSFET Datasheet: N-Ch, 800V, 16A. Full specification with pinout and replacement list

STB23N80K5 Specs and Replacement

Type Designator: STB23N80K5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO263

STB23N80K5 substitution

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STB23N80K5 datasheet

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STB23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a D PAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT TAB STB23N80K5 800 V 0.28 16 A 190 W Industry s lowest R x area DS(on) 3 Industry s best figure of merit (FoM) 1 Ultra low gate charge 100% avalanche tested Zener-protected... See More ⇒

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stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf pdf_icon

STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N N-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID 3 (@Tjmax) max 3 1 2 1 STB23NM60N 19 A D PAK I PAK STI23NM60N 19 A 3 STF23NM60N 650 V 0.180 19 A (1) 2 1 STP23NM60N 19 A TO-247 STW23NM60N 19 A 3 3 2 2 1 1 1. Limited ... See More ⇒

8.2. Size:814K st
stb23nm60nd sti23nm60nd stf23nm60nd stp23nm60nd stw23nm60nd.pdf pdf_icon

STx23NM60ND N-channel 600 V, 0.150 , 19.5 A, FDmesh II Power MOSFET (with fast diode) D PAK, I PAK, TO-220, TO-220FP, TO-247 Features VDSS RDS(on) Type ID 3 max. 3 (@Tjmax) 1 2 1 STx23NM60ND 650 V ... See More ⇒

8.3. Size:558K st
stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf pdf_icon