STB35N60DM2 Todos los transistores

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 stb35n60dm2.pdf

STB35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a D PAK package Datasheet - production data Features R DS(on) Order code VDS ID PTOT TAB max. STB35N60DM2 600 V 0.110 28 A 210 W 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance D2PAK 100% avalanche tested Extremely

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 stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf

STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5 N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ Type RDS(on) max ID TJMAX 3 3 1 2 3 1 2 STB35N65M5 710 V

 7.2. Size:204K  inchange semiconductor
 stb35n65m5.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor STB35N65M5 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIM

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 stb35nf10 stp35nf10.pdf

STB35NF10 STP35NF10 N-channel 100V - 0.030 - 40A - D2PAK/TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB35NF10 100V

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 stb35nf10t4.pdf

STB35NF10 STP35NF10 N-channel 100V - 0.030 - 40A - D2PAK/TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB35NF10 100V