All MOSFET. STB35N60DM2 Datasheet

 

STB35N60DM2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STB35N60DM2
   Marking Code: 35N60DM2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 54 nC
   Rise Time (tr): 17 nS
   Drain-Source Capacitance (Cd): 110 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm
   Package: TO263

 STB35N60DM2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB35N60DM2 Datasheet (PDF)

 ..1. Size:761K  st
stb35n60dm2.pdf

STB35N60DM2
STB35N60DM2

STB35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code VDS ID PTOT TAB max. STB35N60DM2 600 V 0.110 28 A 210 W 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance D2PAK 100% avalanche tested Extremely

 7.1. Size:1202K  st
stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf

STB35N60DM2
STB35N60DM2

STB35N65M5, STF35N65M5, STI35N65M5STP35N65M5, STW35N65M5N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB35N65M5 710 V

 7.2. Size:204K  inchange semiconductor
stb35n65m5.pdf

STB35N60DM2
STB35N60DM2

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STB35N65M5FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

 8.1. Size:421K  st
stb35nf10 stp35nf10.pdf

STB35N60DM2
STB35N60DM2

STB35NF10STP35NF10N-channel 100V - 0.030 - 40A - D2PAK/TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB35NF10 100V

 8.2. Size:413K  st
stb35nf10t4.pdf

STB35N60DM2
STB35N60DM2

STB35NF10STP35NF10N-channel 100V - 0.030 - 40A - D2PAK/TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB35NF10 100V

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: STH12N120K5-2

 

 
Back to Top