STD10LN80K5 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STD10LN80K5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD10LN80K5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 43 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.63 Ohm

Encapsulados: TO252

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STD10LN80K5 datasheet

..1. Size:837K st
std10ln80k5.pdf pdf_icon

STD10LN80K5 N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD10LN80K5 800 V 0.63 8 A Industry s lowest RDS(on) x area Industry s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Figure 1 Internal schema

8.1. Size:108K samhop
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Otros transistores... STB35N60DM2 , STB37N60DM2AG , STB45N30M5 , STB47N50DM6AG , STB55NF06-1 , STB80NF55-06 , STB90NF03L-1 , STB9NK70Z , 20N60 , STD12N60DM2AG , STD13N50DM2AG , STD13N60DM2 , STD15N50M2AG , STD20NF06L-1 , STQ2HNK60Z-AP , STD4LN80K5 , STD4N90K5 .