STD10LN80K5 PDF and Equivalents Search

 

STD10LN80K5 Specs and Replacement

Type Designator: STD10LN80K5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 43 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.63 Ohm

Package: TO252

STD10LN80K5 substitution

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STD10LN80K5 datasheet

 ..1. Size:837K  st
std10ln80k5.pdf pdf_icon

STD10LN80K5

STD10LN80K5 N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD10LN80K5 800 V 0.63 8 A Industry s lowest RDS(on) x area Industry s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Figure 1 Internal schema... See More ⇒

 8.1. Size:108K  samhop
stu10l01 std10l01.pdf pdf_icon

STD10LN80K5

Gre r r P Pr Pr Pro STU/D10L01 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 10A 100V 213 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA... See More ⇒

 9.2. Size:588K  1
std10n10-1 std10n10t4.pdf pdf_icon

STD10LN80K5

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Detailed specifications: STB35N60DM2, STB37N60DM2AG, STB45N30M5, STB47N50DM6AG, STB55NF06-1, STB80NF55-06, STB90NF03L-1, STB9NK70Z, 20N60, STD12N60DM2AG, STD13N50DM2AG, STD13N60DM2, STD15N50M2AG, STD20NF06L-1, STQ2HNK60Z-AP, STD4LN80K5, STD4N90K5

Keywords - STD10LN80K5 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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