STD13N50DM2AG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STD13N50DM2AG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 38 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: TO252

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STD13N50DM2AG Datasheet (PDF)

..1. Size:519K st
std13n50dm2ag.pdf

STD13N50DM2AGDatasheetAutomotive-grade N-channel 500 V, 320 m typ., 11 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on ) max. IDOrder codeTABSTD13N50DM2AG 500 V 360 m 11 A321DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitanceD(2, TAB) Low on-resistance 100% avalanche tested E

8.1. Size:1154K st
stb13nm60n std13nm60n.pdf

STB13NM60N, STD13NM60NN-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFETs in DPAK and DPAK packagesDatasheet production dataFeatures Order code VDS (@Tjmax) RDS(on) max IDSTB13NM60NTAB650 V 0.36 11 ATABSTD13NM60N3 100% avalanche tested31 1 Low input capacitance and gate chargeDPAKDPAK Low gate input resistanceApplications

8.2. Size:550K st
std13n65m2.pdf

STD13N65M2N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABSTD13N65M2 650 V 0.43 10 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFigure 1. I

8.3. Size:1515K st
stb13n60m2 std13n60m2.pdf

STB13N60M2, STD13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTB13N60M2TAB650 V 0.38 11 ASTD13N60M2TAB33 Extremely low gate charge11 Lower RDS(on) x area vs previous generationDPAKD2PAK Low gate input resistance

8.4. Size:1276K st
stb13nm60n std13nm60n stf13nm60n stp13nm60n stw13nm60n.pdf

STB13NM60N,STD13NM60N,STF13NM60NSTP13NM60N,STW13NM60NN-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFETin D2PAK, DPAK, TO-220FP, TO-220, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max3322STB13NM60N 650 V

8.5. Size:1546K st
std13nm60nd stf13nm60nd stp13nm60nd.pdf

STD13NM60ND, STF13NM60ND, STP13NM60NDN-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS @ TJmax RDS(on) max ID313STD13NM60ND21DPAKSTF13NM60ND 650 V 0.38 11 ATO-220FPSTP13NM60NDTAB The worldwide best RDS(on)* area among fast recove

8.6. Size:513K st
std13n60dm2.pdf

STD13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a DPAK packageVDS RDS(on) max. IDOrder codesTABSTD13N60DM2 600 V 0.365 11 A Fast-recovery body diode321 Extremely low gate charge and input capacitanceDPAK Low on-resistance 100% avalanche testedD(2, TAB) Extremely high dv/dt ruggedness Zener-protected

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