STD13N50DM2AG MOSFET. Datasheet pdf. Equivalent
Type Designator: STD13N50DM2AG
Marking Code: 13N50DM2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.7 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 38 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO252
STD13N50DM2AG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD13N50DM2AG Datasheet (PDF)
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