FDD3680 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD3680  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm

Encapsulados: TO252 DPAK

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FDD3680 datasheet

 ..1. Size:75K  fairchild semi
fdd3680.pdf pdf_icon

FDD3680

February 2001 FDD3680 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 25 A, 100 V. R = 46 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 51 m @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. Low gate charge (38 nC typical) These

 ..2. Size:389K  onsemi
fdd3680.pdf pdf_icon

FDD3680

FDD3680 100V N-Channel PowerTrench MOSFET Features General Description 25 A, 100 V. R = 46 m @ V = 10 V DS(ON) GS This N-Channel MOSFET has been designed R = 51 m @ V = 6 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge (38 nC typical) switching PWM controllers. These MOSFETs featur

 ..3. Size:819K  cn vbsemi
fdd3680.pdf pdf_icon

FDD3680

FDD3680 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

 8.1. Size:266K  fairchild semi
fdd3682.pdf pdf_icon

FDD3680

September 2002 FDD3682 N-Channel PowerTrench MOSFET 100V, 32A, 36m Features Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect

Otros transistores... STU06L01, FDD3670, STU04N20, FDD3672, STU03N20, FDD3672F085, STU03L07, STU03L01, K4145, FDD3682F085, STT812A, FDD3690, STT6603, FDD3706, FDD3860, STT626, FDD390N15A