All MOSFET. FDD3680 Datasheet


FDD3680 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD3680

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 68 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 38 nC

Maximum Drain-Source On-State Resistance (Rds): 0.046 Ohm

Package: TO252DPAK

FDD3680 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FDD3680 Datasheet (PDF)

0.1. fdd3680.pdf Size:75K _fairchild_semi


February 2001FDD3680100V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 25 A, 100 V. R = 46 m @ V = 10 VDS(ON) GSspecifically to improve the overall efficiency of DC/DCR = 51 m @ V = 6 VDS(ON) GSconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (38 nC typical)These

8.1. fdd3682.pdf Size:266K _fairchild_semi


September 2002FDD3682N-Channel PowerTrench MOSFET100V, 32A, 36mFeatures Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect

8.2. fdd3682.pdf Size:225K _inchange_semiconductor


INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDD3682FEATURESStatic drain-source on-resistance:RDS(on)36m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC Converters and off-line UPSHigh Voltage Synchronous RectifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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