STL10N65M2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STL10N65M2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6.6 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: POWERFLAT5X6HV

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STL10N65M2 Datasheet (PDF)

..1. Size:771K st
stl10n65m2.pdf

STL10N65M2DatasheetN-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageFeaturesVDS RDS(on ) max. IDOrder codeSTL10N65M2 650 V 1.00 4.5 A12 Extremely low gate charge34 Excellent output capacitance (COSS) profilePowerFLAT 5x6 HV 100% avalanche tested Zener-protectedD(5, 6, 7, 8)8 7 6 5Applications Switch

7.1. Size:1020K st
stl10n60m2.pdf

STL10N60M2N-channel 600 V, 0.580 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesVDS @ Order codeTJmax RDS(on) max IDSTL10N60M2 650 V 0.660 5.5 A Extremely low gate charge123 Lower RDS(on) x area vs previous generation4 Low gate input resistancePowerFLAT 5x6 HV 100% aval

8.1. Size:700K st
stl10n3llh5.pdf

STL10N3LLH5N-channel 30 V, 0.015 , 9 A, PowerFLAT 3.3x3.3STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmaxSTL10N3LLH5 30 V

9.1. Size:1131K st
stl105ns3llh7.pdf

STL105NS3LLH7N-channel 30 V, 0.0033 typ., 27 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6Datasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL105NS3LLH7 30 V 0.0039 27 A Very low on-resistance12 Very low Qg34 Avalanche high ruggednessPowerFLAT5x6 Embedded Schottky diodeApplications Switching

9.2. Size:100K st
stl106d.pdf

STL106DHigh voltage fast-switching NPN power transistorFeatures NPN transistor Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications Compact fluorescent lamps at 110V A.C. mains Flyback and forward single transistor low power TO-92converters at 110V A.C. mainsDescriptionFigure 1. Intern

9.3. Size:770K st
stl100n1vh5.pdf

STL100N1VH5N-channel 12 V, 0.0022 , 25 A PowerFLAT (5x6)STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.STL100N1VH5 12 V

9.4. Size:1396K st
stl100n10f7.pdf

STL100N10F7N-channel 100 V, 0.0062 typ., 19 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesRDS(on) Order code VDSS max ID PTOT1STL100N10F7 100 V 0.0073 19 A 5 W234 Ultra low on-resistancePowerFLAT 5x6 100% avalanche testedApplications Switching applicationsDescriptionFigure 1. Int

9.5. Size:2352K st
stl100n6lf6.pdf

STL100N6LF6N-channel 60 V, 3.3 m typ., 25 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL100N6LF6 60 V 4.4 m 25 A Low gate charge12 Very low on-resistance34 High avalanche ruggednessPowerFLAT 5x6Applications Switching applicationsDescriptionFigure 1.

9.6. Size:377K st
stl100nh3ll.pdf