STP8N120K5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP8N120K5
Código: 8N120K5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 130 W
Voltaje máximo drenador - fuente |Vds|: 1200 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 13.7 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 44 pF
Resistencia entre drenaje y fuente RDS(on): 2 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET STP8N120K5
STP8N120K5 Datasheet (PDF)
stp8n120k5.pdf
STP8N120K5DatasheetN-channel 1200 V, 1.65 typ., 6 A, MDmesh K5 Power MOSFET in a TO-220 packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTP8N120K5 1200 V 2.00 6 A 130 W Industrys lowest RDS(on) x area32 Industrys best FoM (figure of merit)1TO-220 Ultra-low gate charge 100% avalanche tested Zener-protectedD(2, TAB)Applications
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stp8nc60.pdf
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stb8nm60t4 std5nm60-1 std5nm60t4 stp8nm60fp.pdf
STD5NM60STB8NM60 - STP8NM60N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, DPAK, IPAKFeaturesType VDSS RDS(on) ID Pw31STD5NM60 650 V
std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf
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stp8nm60d.pdf
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stp8nm60 std5nm60 stb8nm60.pdf
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stp8nc50-fp--1.pdf
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stf8nk100z stp8nk100z.pdf
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stb8nm60d stp8nm60d.pdf
STB8NM60DSTP8NM60DN-CHANNEL 600V - 0.9 - 8A - TO-220/D2PAKFast Diode MDmesh Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB8NM60D 600V
stp8nm50.pdf
STP8NM50STP8NM50FPN-CHANNEL 500V - 0.7 - 8A TO-220/TO-220FPMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP8NM50 500V
stp8n80k5 stu8n80k5.pdf
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stp8nk80z.pdf
STP8NK80Z - STP8NK80ZFPSTW8NK80ZN-CHANNEL 800V - 1.3 - 6.2A TO-220/TO-220FP/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP8NK80Z 800 V
stp8nm60 std5nm60.pdf
STP8NM60, STP8NM60FPSTD5NM60, STD5NM60-1N-CHANNEL 600V - 0.9 - 8A TO-220/TO-220FP/DPAK/IPAKMDmesh Power MOSFETTYPE VDSS RDS(on) ID PwSTP8NM60 600 V
stp8ns25fp.pdf
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std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf
STD8NM60ND, STF8NM60NDSTP8NM60ND, STU8NM60NDN-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STD8NM60ND 650 V
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stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf
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stp8ns25 stp8ns25fp.pdf
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stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf
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stp8nm50fp stp8nm50 stp8nm50fp.pdf
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stf8nk85z stp8nk85z stp8nk85z stf8nk85z.pdf
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stp8nk85z stf8nk85z 2.pdf
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stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf
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stp8nc70z.pdf
STP8NC70Z - STP8NC70ZFPSTB8NC70Z - STB8NC70Z-1N-CHANNEL 700V - 0.90 - 6.8A TO-220/FP/D2PAK/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP8NC70Z/FP 700V
stp8na50.pdf
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stp8ns25.pdf
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std5nm60 stb8nm60 stp8nm60.pdf
STD5NM60STB8NM60 - STP8NM60N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, DPAK, IPAKFeaturesType VDSS RDS(on) ID Pw31STD5NM60 650 V
stp8nk80zfp.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP8NK80ZFPDESCRIPTIONDrain Current I =6.2A@ T =25D CDrain Source Voltage-: V =800V(Min)DSS100% avalanche testedFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETE
stp8n65m5.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP8N65M5FEATURESHigher V ratingDSSExcellent switching performanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
