FDD390N15A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD390N15A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: TO252 DPAK
Búsqueda de reemplazo de FDD390N15A MOSFET
FDD390N15A datasheet
fdd390n15a.pdf
October 2011 FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40m Features Description RDS(on) = 33.5m ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performanc
fdd390n15a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd390n15a.pdf
isc N-Channel MOSFET Transistor FDD390N15A FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 42m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
fdd390n15alz.pdf
January 2014 FDD390N15ALZ N-Channel PowerTrench MOSFET 150 V, 26 A, 42 m Features Description RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 A lored to minimize the on-state resistance while maintain
Otros transistores... FDD3680 , FDD3682F085 , STT812A , FDD3690 , STT6603 , FDD3706 , FDD3860 , STT626 , IRFB31N20D , FDD3N40 , STT622S , FDD3N50NZ , FDD4141 , FDD4141F085 , FDD4243 , FDD4243F085 , FDD4685 .
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