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FDD390N15A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDD390N15A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 63 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO252 DPAK

 Аналог (замена) для FDD390N15A

 

 

FDD390N15A Datasheet (PDF)

 ..1. Size:624K  fairchild semi
fdd390n15a.pdf

FDD390N15A
FDD390N15A

October 2011FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40mFeatures Description RDS(on) = 33.5m ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performanc

 ..2. Size:487K  onsemi
fdd390n15a.pdf

FDD390N15A
FDD390N15A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:307K  inchange semiconductor
fdd390n15a.pdf

FDD390N15A
FDD390N15A

isc N-Channel MOSFET Transistor FDD390N15AFEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 42m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 0.1. Size:1003K  fairchild semi
fdd390n15alz.pdf

FDD390N15A
FDD390N15A

January 2014FDD390N15ALZN-Channel PowerTrench MOSFET150 V, 26 A, 42 mFeatures Description RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 Alored to minimize the on-state resistance while maintain

 0.2. Size:1107K  onsemi
fdd390n15alz.pdf

FDD390N15A
FDD390N15A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.3. Size:816K  cn vbsemi
fdd390n15al.pdf

FDD390N15A
FDD390N15A

FDD390N15ALwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONS

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