FDD390N15A datasheet, аналоги, основные параметры
Наименование производителя: FDD390N15A 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 63 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
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Аналог (замена) для FDD390N15A
- подборⓘ MOSFET транзистора по параметрам
FDD390N15A даташит
fdd390n15a.pdf
October 2011 FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40m Features Description RDS(on) = 33.5m ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performanc
fdd390n15a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd390n15a.pdf
isc N-Channel MOSFET Transistor FDD390N15A FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 42m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
fdd390n15alz.pdf
January 2014 FDD390N15ALZ N-Channel PowerTrench MOSFET 150 V, 26 A, 42 m Features Description RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 A lored to minimize the on-state resistance while maintain
Другие IGBT... FDD3680, FDD3682F085, STT812A, FDD3690, STT6603, FDD3706, FDD3860, STT626, IRFZ46N, FDD3N40, STT622S, FDD3N50NZ, FDD4141, FDD4141F085, FDD4243, FDD4243F085, FDD4685
Параметры MOSFET. Взаимосвязь и компромиссы
History: FDD3690
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