STW56N65DM2 Todos los transistores

STW56N65DM2 N-channel 650 V, 0.058 typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW56N65DM2 650 V 0.065 48 A 360 W Fast-recovery body diode 3 Extremely low gate charge and input 2 capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extre

STW56N65M2 N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max ID STW56N65M2 650 V 0.062 49 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested 3 2 Zener-protected 1 Applications TO-247 Switching applications Figure

STW56N65M2-4 N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS RDS(on) max ID STW56N65M2-4 650 V 0.062 49 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge 4 Excellent output capacitance (Coss) profile 3 2 100% avalanche tes

STW56N60M2-4 N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) D DS @ T R max I STW56N60M2-4 650 V 0.055 52 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100%

STW56N60M2 N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features RDS(on) Order code VDS @ TJmax max ID STW56N60M2 650 V 0.055 52 A Extremely low gate charge Excellent output capacitance (Coss) profile 3 2 100% avalanche tested 1 Zener-protected TO-247 Applications Switching application