FDD3N50NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD3N50NZ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 40 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 2.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 650 nC
Resistencia entre drenaje y fuente RDS(on): 2.5 Ohm
Paquete / Cubierta: TO252 DPAK
Búsqueda de reemplazo de MOSFET FDD3N50NZ
FDD3N50NZ Datasheet (PDF)
fdd3n50nz.pdf
October 2009UniFET-IITMFDD3N50NZN-Channel MOSFET 500V, 2.5A, 2.5Features Description RDS(on) = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 6.2nC)stripe, DMOS technology. Low Crss ( Typ. 2.5pF)This advance technology has been esp
fdd3n50nz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd3n50nz.pdf
FDD3N50NZwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS
fdd3n50nztm.pdf
November 2013FDD3N50NZN-Channel UniFETTM II MOSFET500 V, 2.5 A, 2.5 Features Description RDS(on) = 2.1 (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 6.2 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 2.5 pF)on
fdd3n50nztm.pdf
FDD3N50NZTMwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoH
fdd3n40 fdu3n40.pdf
February 2007TMUniFETFDD3N40 / FDU3N40400V N-Channel MOSFETFeatures Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.5 nC)stripe, DMOS technology. Low Crss ( typical 3.7 pF)This advanced technology has been especially ta
fdd3n40tm.pdf
FDD3N40TMwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS
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